报告题目：Integrating perovskite oxides and layered materials towards future electronics
Dr. Xiao WANG (Renshaw, 王骁) is an associate professor at the School of Physical and Mathematical Sciences and the School of Electrical and Electronic Engineering at Nanyang Technological University (NTU) in Singapore. Dr. Wang’s research focues on oxide spintronics/electronics and low-dimensional physics. He has published over 90 scientific papers, including papers as the corresponding author in journals such as Science, Nature Electronics, Nature Communications, and Science Advances. His currently the managing editor of Modern Physics Letters B. He has an H-index of 37 and has received over 4300 citations. His group website is www.RenshawLab.com.
When artificially integrating the naturally incompatible atomic structures, crystallographic orientations and physical functionalities, the interplays at the interfaces induce unexpected functionalities, which is beneficial to future electronics in the aspect of manipulation, functionalization and utilization. However, realizing unrestricted heterogeneous integration and their electronic applications is extremely challenging, because of the technical restrictions of fabrication and the unwanted reduction of interface quality. The challenges are particularly severe in the heterogeneous integration of oxides with either other emerging materials or existing Si technologies, because of the incompatible growth dynamics and large lattice mismatch. In this talk, I will discuss our recent exploration of functional electronic devices based on the heterogeneous integration of perovskite oxide films. First, I will provide a brief overview of the emergent functionalities in oxide heterostructures and approaches to heterogeneously integrating the perovskite oxides. Then, I will discuss on experimental results of two related electronic applications based on the heterogeneously integrated structures consisting of perovskite oxide membranes and layered two-dimensional materials, namely energy-efficient transistors using SrTiO3 and multifunctional devices using Sr-doped LaMnO3. A summary will be provided at the end.