章琦，理学博士，副教授
地址：田家炳北楼106室，东南大学物理学院，中国南京
ORCID：https://orcid.org/0000-0003-4201-7196
研究内容：
本人主要从事低维半导体激子光谱与光电子学研究。以二维半导体及其范德华异质结为核心研究体系，综合运用原位透射、反射与吸收光谱、稳态/时间分辨荧光光谱、拉曼光谱及二次谐波产生（SHG）等多维度表征技术，揭示载流子与激子的本征物性，阐明其与声子、缺陷的相互作用规律。依托对物理本质的深入理解，设计并构筑电致发光器件、光电探测器等高性能光电子器件。秉持底层物理机制与器件应用双向贯通的研究理念，以基础物理引领，突破器件性能瓶颈，以实际应用需求，牵引关键科学问题凝练，实现基础研究与应用技术的深度融合与协同创新。
工作经历：
2021. 07 - : 东南大学物理学院，副教授
2019. 07 - 2021. 03: 新加坡国立大学物理系，博士后
教育背景:
2015. 01 - 2019. 01: 新加坡国立大学物理系，应用物理，博士
2010. 09 - 2014. 06: 苏州大学物理学院，应用物理，学士
Teaching:
新材料中的光谱分析方法 (英文), 秋季学期
近代物理实验, 春季学期
Honors and Awards:
2019年国家自费留学生奖学金
Grants:
国自然青年基金 (2023-), 主持
江苏省青年基金(2023-), 主持
国家重点研发计划 (2022-2025), 参与
国自然国际合作与交流项目 (2022-2025), 参与
代表论文:
†Corresponding authors; *equal contribution.
Publications after joining SEU
1. Wang S, Fu Q, Zheng T, Han X, Wang H, Zhou T, Liu J, Liu T, Zhang Y, Chen K, Wang Q, Duan Z, Zhou X, Watanabe K, Taniguchi T, Yan J, Huang Y, Xiong Y, Yang J, Hu Z, Xu T, Sun L, Hong J, Zheng Y, You Y, Zhang Q†, Lu J†, Ni Z†. Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates. Nature Electronics8(1), 56-65 (2025).
112. Gao J, Wang C, Sow C, Zhang Q†, Poh E†. Ultrathin quarter-waveplates based on two-dimensionalanisotropic NbOCl2. Nature Communications (2026).
3. Hu Z, Xia W, Fu Q, Wu Z, Jiang X, Han X, Wang S, Sun X, Chen J, Zhao T, Liu X, Duan Z, Huang Y, Wang J, Lu J, Zhong F†, Zhang Q†, Ni Z†. Highly efficient dual-gated light-emitting diodes based on suspended monolayer WSe2. Nano Letters26 (1), 651-659 (2026).
4. Fu Q, Wang S, Zhou B, Xia W, Liu X, Han X, Duan Z, Liu T, Sun X, Yuan X, Huang Y, Lin J†. Zhang Q†. Hu Z†. Lu J. Ni Z†. Defect‐mediated efficient and tunable emission in van der Waals integrated light sources at room temperature. Advanced Functional Materials35(4), 2414062 (2025).
5. Wang S, Li J, Zeng P, Han X, Zhang J, Liu X, Xia W, Duan Z, Liu W, Xiao S, Fu Q†, Zhang Q†, Lu J, Ni Z. Boosting excitonic emission in 2D multiple quantum well superlattices by plasma-assisted electrochemical intercalation. The Journal of Physical Chemistry Letters16(21), 5405-11 (2025).
6. Qiu H*, Yu Z*, Zhao T*, Zhang Q*, Xu M*, Li P*, Li T*, Bao W, Chai Y, Chen S, Chen Y. Two-dimensional materials for future information technology: status and prospects. Science China Information Sciences67(6), 160400 (2024).
Publications before joining SEU
1. Chen Z, Zhang Q†, Zhu M, Chen H, Wang X, Xiao S, Loh KP, Eda G, Meng J, He J†. In-plane anisotropic nonlinear optical properties of two-dimensional organic–inorganic hybrid perovskite. The Journal of Physical Chemistry Letters12(29), 7010-8 (2021).
2. Zhang Q, Linardy E, Wang X, Eda G. Excitonic energy transfer in heterostructures of quasi-2D perovskite and monolayer WS2. ACS nano14(9), 11482-9 (2020).
3. Chen Z*, Zhang Q*, Zhu M*, Wang X, Wang Q, Wee AT, Loh KP, Eda G, Xu QH. Synthesis of two‐dimensional perovskite by inverse temperature crystallization and studies of exciton states by two‐photon excitation spectroscopy. Advanced Functional Materials 30(31), 2002661 (2020).
4. Wang Q*, Zhang Q*, Luo X*, Wang J, Zhu R, Liang Q, Zhang L, Yong JZ, Yu Wong CP, Eda G, Smet JH. Optoelectronic properties of a van der Waals WS2 monolayer/2D perovskite vertical heterostructure. ACS Applied Materials & Interfaces12(40), 45235-42 (2020).
5. Wang Q*, Zhang Q*, Zhao X*, Zheng YJ, Wang J, Luo X, Dan J, Zhu R, Liang Q, Zhang L, Wong PJ. High-energy gain upconversion in monolayer tungsten disulfide photodetectors. Nano Letters19(8), 5595-603 (2019).
6. Zhang Q*, Ji Y*, Chen Z, Vella D, Wang X, Xu QH, Li Y, Eda G. Controlled aqueous synthesis of 2D hybrid perovskites with bright room-temperature long-lived luminescence. The Journal of Physical Chemistry Letters10(11), 2869-73 (2019).
7. Zhang Q, Chu L, Zhou F, Ji W, Eda G. Excitonic properties of chemically synthesized 2D organic–inorganic hybrid perovskite nanosheets. Advanced Materials30(18), 1704055 (2018).
8. Wang Q*, Zhang Q*, Zhao X*, Luo X, Wong CP, Wang J, Wan D, Venkatesan T, Pennycook SJ, Loh KP, Eda G. Photoluminescence upconversion by defects in hexagonal boron nitride. Nano Letters18(11), 6898-905 (2018).