姓名: 叶浩燊
办公室: 东南大学田家炳楼北楼502
电话: 17722392471
Email: yiphosum@seu.edu.cn
595798504@qq.com
 
研究方向

铁磁、铁电、多铁材料


    Publications
  1. Superior ferroelectricity and nonlinear optical response in a hybrid germanium iodide hexagonal perovskite.
    Kun Ding, Haoshen Ye (Co-first author), Changyuan Su, Yu-An Xiong, Guowei Du, Yu-Meng You, Zhi-Xu Zhang*, Shuai Dong*, Yi Zhang*, Da-Wei Fu*
    Nature Communications 2023, 14, 2863

  2. Room-temperature spin valve effect in the TiCr2N4 monolayer.
    Haoshen Ye, Lisha Liu, Dongmei Bai, G. P. Zhang, Junting Zhang and Jianli Wang*
    Journal of Materials Chemistry C 2022, 10, 12422-12427

  3. Significant enhancement of magnetic anisotropy and conductivity in GaN/CrI3 van der Waals heterostructures via electrostatic doping.
    Haoshen Ye, Xiao Wang, Dongmei Bai, Junting Zhang, Xiaoshan Wu, G. P. Zhang, and Jianli Wang*
    Physical Review B 2021, 104, 075433

  4. Spin valve effect in VN/GaN/VN van der Waals heterostructures.
    Haoshen Ye, Yijie Zhu, Dongmei Bai, Junting Zhang, Xiaoshan Wu, and Jianli Wang*
    Physical Review B 2021, 103, 035423

  5. Strain and electric field tuned electronic properties of BAs/MoSe2 van der Waals heterostructures for alternative electrodes and photovoltaic cell in photocatalysis.
    Haoshen Ye, Haohao Sheng, Dongmei Bai*, Junting Zhang, Jianli Wang*
    Physica E 2020, 120, 114055

  6. Two-orbital spin-fermion model study of ferromagnetism in the honeycomb lattice.
    Kaidi Xu, Di Hu, Jun Chen, Haoshen Ye, Lin Han, Shan-Shan Wan*g, and Shuai Dong*
    Physical Review B 2023, 108, 094401

  7. Two-dimensional HfCr2N4 semiconductor with intrinsic room-temperature ferromagnetism and enhanced conductivity via electrostatic doping.
    Dingwen Zhang, Meng Su, Jingwen Zhang, Haoshen Ye, Dongmei Bai, Jianli Wang*
    Applied Surface Science 2024, 30, 159128

  8. Controllable magnetic anisotropy and conductivity in ScCrSe3 monolayer driven by electrostatic doping.
    Liwei Han, Zeyi Zhang, Haoshen Ye, Leiming Chen, Jianli Wang*
    Applied Surface Science 2024, 30, 159128

  9. Magnetic and Electronic Properties of AlN/VSe2 van der Waals Heterostructures from Combined First-Principles and Schrödinger-Poisson Simulations.
    Yijie Zhu, Meng Su, Haoshen Ye, Dongmei Bai, Ming Li, G. P. Zhang, Junting Zhang, Jianli Wang*
    Physical Review Applied 2022, 10, 024012

  10. Interface and transport properties of InN/VSi2P4 van der Waals magnetic heterostructuresg.
    Yijie Zhu, Meng Su, Haoshen Ye, Jianli Wang*
    Physical Review B 2023, 108, 125413

  11. Magnetic and transport properties of two-dimensional ferromagnet VSe2 with Se vacancies.
    Mengjie Wei, Haoran Ma, Haoshen Ye, Jianli Wang*, Dongmei Bai*
    Vaccum 2023, 574, 170683

  12. Enhanced Curie temperature and conductivity of van der Waals ferromagnet MgV2S4 via electrostatic doping.
    Jie Sun, Zheng Tan, Haoshen Ye, Dongmei Bai*, Jianli Wang*
    Physical Chemistry Chemical Physics 2023, 25, 5858-5884