题目：Strategies Toward the Synthesis of Wafer-Scale Single Crystalline 2D materials
报告人：丁峰教授 （Ulsan National Institute of Science and Technology）
时间： 7月12日(周五) 下午 3:00
地点： 田家炳楼南205室
邀请人：王金兰。欢迎参加！
摘要：The discovery of graphene leads to the overwhelming research efforts on two-dimensional (2D) materials. Until now, thousands of 2D materials have been predicted and hundreds of them were synthesized experimentally. But only very few of them, such as graphene, h-BN and MoS2, can be synthesized in large area and high quality. To achieve the industrial applications of various 2D materials, wafer scale 2D single crystals are highly desired, if possible. Here we demonstrate a few possible routes toward the synthesis of wafer scale single crystals of graphene and other 2D materials and their experimental realizations.The weak van der Waals interaction between graphene and a substrate allows a single crystalline graphene island to across a grain boundary (GB) of the substrate without changing its single-crystallinity. Based on this theoretical prediction, we propose that wafer scale graphene single crystal could be synthesized on a polycrystalline substrate via nucleation suppression. [1] Such a strategy was realized by the method of feedstock local feeding during graphene CVD growth. [2 ]The preferential alignment of nucleated graphene islands on a transition metal surface allows us to grow single crystalline graphene on a symmetry matching substrate and, therefore, wafer scale graphene single crystal growth might be achieved on a large single crystalline substrate.[1,3,4] Experimentally, large area single crystalline Cu (111) foils was synthesized for the growth of wafer scale graphene single crystal.[5,6] Besides the (111) surfaces of fcc crystals, our theoretical analysis predicts that unidirectional growth of hexagonal boron nitride or other 2D materials could be realized on a high-index single crystalline metal foil.[7]
References:
1. X Zhang, Z Xu, L Hui, J Xin, F Ding, (2012), The Journal of Physical Chemistry Letters 3, 2822-2827
2. T Wu, X Zhang, Q Yuan, …, F Ding, Q Yu, X Xie, M Jiang, (2016), Nature materials 15, 43
3. J Gao, J Yip, J Zhao, BI Yakobson, F Ding, (2011), Journal of the American Chemical Society 133, 5009-5015
4. Q Yuan, BI Yakobson, F Ding (2014), The journal of physical chemistry letters, 5, 3093-3099
5. S Jin, M Huang, Y Kwon, L Zhang, …, (2018), Science 362, 1021-1025
6. X Xu, Z Zhang, J Dong, D Yi, …, F Ding, K Liu, (2017), Science Bulletin 62, 1074-1080
7. L Wang, XZ Xu, LN Zhang, …, ZJ Wang, F Ding, KH Liu, (2019) Nature 570, 91-95
报告人简介：Prof. Feng Ding obtained his Bs, Ms and PhD degrees from Huazhong University of Science and Technology, Fudan University and Nanjing University in 1993, 1996 and 2002, respectively. Then he was a Postdoctoral Research Fellow in Gothenburg University and Chalmers University in Sweden from 2003 to 2005. From 2005, he joined Rice University as a Research Scientist until the end of 2008. From 2009-2016, he worked in the Institute of Textile and Clothing of Hong Kong Polytechnic University as an Assistant Professor and Associate Professor (from 2013). From the beginning of 2017, he joined UNIST as a Distinguished Professor and the IBS-CMCM as a group leader. Prof. Ding’s research group’s research interests mainly focus on the computational method development, theoretical exploration of various carbon materials and 2D materials, especially on their formation mechanism, the kinetics of their nucleation, growth and etching. Prof. Ding and his colleagues published more than 200 SCI papers in leading journals of natural science, with > 40 in Science, Nature serious journals, PNAS, Sci Adv., PRL, JACS, ACIE. These publications were cited by > 10，000 times (Google Scholar) and his personal h-index is 56.