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12月24日(上午9:00)学术报告:A new type of ferroelectric material - doped HfO2

报告题目:A new type of ferroelectric material - doped HfO2 

报告人:魏莹芬 博士(格罗宁根大学)

时间:  1224(周一)9:00

地点:   田家炳楼南203

邀请人:董帅。欢迎参加!

 

摘要:The ferroelectricity recently observed in ultra-thin films of doped-hafnia is robust at the nanoscale, where the other ferroelectrics loose their functionality. Hafnia is also Si-compatible, so this recent discovery represents a breakthrough in the field. However, the origin of this ferroelectricity remains elusive due to the extremely low thickness of the films and the presence of secondary phases, which hamper the characterization. In this work, epitaxial single-phase Hf0.5Zr0.5O2 films have been grown on La0.7Sr0.3MnO3/SrTiO3 substrates, displaying outstanding ferroelectric properties and superb crystallinity . Synchrotron x-ray diffraction and electron microscopy reveal a new polar rhombohedral phase, different from the commonly reported polar orthorhombic phase. Aided by density functional theory, we propose a compelling model for the stabilization of FE phase and provide guidelines to uncover ferroelectricity in other simple oxides.

 

[1] Y. Wei, et al. Nature Materials 17, 1095 (2018)

 

魏莹芬,格罗宁根大学博士生。目前研究方向:新型铁电材料HfO2, 多铁隧道结。在Nature Materials等期刊发表论文5篇。

动态信息录入:蒋红燕    责任编辑:蒋红燕 
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