学术报告：Understanding Complex Oxide Interfaces with Atomic Precision
曾获NSF Career Award。发表论文100余篇，包括Science, Phys. Rev. Lett., Adv. Mater. PNAS等。
A defining characteristic of complex transition-metal oxides (TMOs) is that they contain incomplete d sub-shells thus having a multiple of possible ground states. This triggers their vast variety of physical properties, emerging from a complicated competition between multiple energy scales and the close coupling with lattice and spin degrees of freedom. On one hand, both chemical and physical complexity presents a formidable challenge in condensed matter physics and materials science in general. On the other hand, the complexity is directly responsible for their tunability, offering a fabulous playground for making artificial structures of these materials with new quantum physics of matter.It has become increasingly clear that surfaces, interfaces, thin films and heterostructures of TMOs display a rich diversity of fascinating properties that are related, but not identical to, the bulk phenomena, while the origin is still fiercely contested. In this talk, I will introduce our ability in growing high quality thin films with atomically sharp interfaces, as well as powerful tools to characterize their properties down to atomic resolution. I will use several examples to illustrate that, such combination of growth and characterization techniques not only allow us to discover the unknown origin of conventional interface, but widely expand the opportunities to explore unconventional interfaces and search for novel quantum functionalities.